This data set contains: 1. Trajectories of glass and liquid Ge2Sb2Te5 models generated with the GAP. There are 5 models labeled 001-005 of 315 atoms and one large model of 7,200 atoms labeled 7K. 2. Structural analysis data including: radial distribution functions, rings, voids, tetrahedral angular order parameters. 3. The inter-atomic potential used to carry out the simulations. 4. The crystallization trajectory of one of the GAP models is provided separately due to the size
Three extensive density functional/molecular dynamics simulations of the crystallization of amorphou...
Phase change memories (PCM) exploit the variation of resistance of a small volume of phase change ma...
Multilevel operation is a topic of much current research in the field of phase-change memory materia...
The phase-change material, Ge2Sb2Te5, is the canonical material ingredient for next-generation stora...
The phase-change material, Ge2Sb2Te5, is the canonical material ingredient for next-generation stora...
This is a dataset related to the publication "Device-scale atomistic modelling of phase-change memor...
Dataset contains atomic configurations discussed in the paper and post-processed raw data of the str...
Abstract: Understanding the relation between the time-dependent resistance drift in the amorphous st...
Understanding the relation between the time-dependent resistance drift in the amorphous state of pha...
Understanding the relation between the time-dependent resistance drift in the amorphous state of pha...
Crystallization of amorphous Ge[subscript 2]Sb[subscript 2]Te[subscript 5] (GST) has been studied us...
Abstract Phase-change memory materials are promising candidates for beyond-silicon, n...
Crystallization of amorphous Ge2Sb2Te5 (GST) has been studied using four extensive (460 atoms, up to...
Studies of supercooled liquid phase‐change materials are important for the development of phase‐chan...
We have simulated, by ab initio molecular dynamics (MD), the entire phase-change (PC) cycle in Ge-Sb...
Three extensive density functional/molecular dynamics simulations of the crystallization of amorphou...
Phase change memories (PCM) exploit the variation of resistance of a small volume of phase change ma...
Multilevel operation is a topic of much current research in the field of phase-change memory materia...
The phase-change material, Ge2Sb2Te5, is the canonical material ingredient for next-generation stora...
The phase-change material, Ge2Sb2Te5, is the canonical material ingredient for next-generation stora...
This is a dataset related to the publication "Device-scale atomistic modelling of phase-change memor...
Dataset contains atomic configurations discussed in the paper and post-processed raw data of the str...
Abstract: Understanding the relation between the time-dependent resistance drift in the amorphous st...
Understanding the relation between the time-dependent resistance drift in the amorphous state of pha...
Understanding the relation between the time-dependent resistance drift in the amorphous state of pha...
Crystallization of amorphous Ge[subscript 2]Sb[subscript 2]Te[subscript 5] (GST) has been studied us...
Abstract Phase-change memory materials are promising candidates for beyond-silicon, n...
Crystallization of amorphous Ge2Sb2Te5 (GST) has been studied using four extensive (460 atoms, up to...
Studies of supercooled liquid phase‐change materials are important for the development of phase‐chan...
We have simulated, by ab initio molecular dynamics (MD), the entire phase-change (PC) cycle in Ge-Sb...
Three extensive density functional/molecular dynamics simulations of the crystallization of amorphou...
Phase change memories (PCM) exploit the variation of resistance of a small volume of phase change ma...
Multilevel operation is a topic of much current research in the field of phase-change memory materia...